Magnetic tunnel junction thesis

Unlike DRAM, which uses electrical charge to determine if a bit is a binary 1 or 0, magnetoresistive memory uses a pair of ferromagnetic metal plates separated by a thin insulating material layer. One plate is a permanent magnet, always magnetized, and the other can be magnetized. The orientation of the two magnetic fields defines the 1 or 0 in a binary bit. This basic structure is called a magnetic tunnel junction (MTJ). Arrays of such magnetic tunnel junctions make up the memory device, like arrays of transistors in an integrated circuit make up random access memory ( RAM ).

T ^ = d S ^ d t = − i ℏ [ ℏ 2 σ , H ^ ] {\displaystyle {\hat {\mathbf {T} }}={\frac {d{\hat {\mathbf {S} }}}{dt}}=-{\frac {i}{\hbar }}\left[{\frac {\hbar }{2}}{\boldsymbol {\sigma }},{\hat {H}}\right]}

Magnetic tunnel junction thesis

magnetic tunnel junction thesis

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